View 6AM15NCHPCH_8292567.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

6am15 silicon n/p channel mos fet high speed power switching ade-208-719 (z) 1st. edition feb. 1999 features low on-resistance n channel : r ds(on) = 0.045 w typ. p channel : r ds(on) = 0.085 w typ. high speed switching 4 v gate drive device can be driven from 5 v source high density mounting outline sp-12ta 1. 2, 8, 9 3,7,10. 4,6,11. 5, 12. 1 2 3 4 5 6 7 8 9 11 10 12 5 s 12 s 11 g 6 g 9 g 8 g s 1 4 g 2 g d 10 d 7 d 3 nch source nch gate nch drain pch drain pch gate pch source pch nch
6am15 2 absolute maximum ratings (ta = 25?) item symbol ratings unit nch pch drain to source voltage v dss 60 ?0 v gate to source voltage v gss ?0 ?0 v drain current i d 10 ?0 a drain peak current i d(pulse) note1 40 ?0 a body-drain diode reverse drain current i dr 10 ?0 a avalanche current i ap note3 10 ?0 a avalanche energy e ar note3 8.5 mj channel dissipation pch (tc = 25?) note2 42 w channel dissipation pch note2 4.8 w channel temperature tch 150 ? storage temperature tstg ?5 to +150 ? note: 1. pw 10 m s, duty cycle 1% 2. 6 devices operation 3. value at ta = 25?, rg 3 50
6am15 3 electrical characteristics (n channel) (ta = 25?) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 60vi d = 10 ma, v gs = 0 gate to source breakdown voltage v (br)gss ?0 v i g = ?00 m a, v ds = 0 gate to source leak current i gss ?0 m av gs = ?6 v, v ds = 0 zero gate voltage drain current i dss 10 m av ds = 60 v, v gs = 0 gate to source cutoff voltage v gs(off) 1.5 2.5 v v ds = 10 v, i d = 1 ma static drain to source on state r ds(on) 0.045 0.060 w i d = 5 a, v gs = 10 v note5 resistance r ds(on) 0.070 0.115 w i d = 5 a, v gs = 4 v note5 forward transfer admittance |y fs | 5.5 9 s i d = 5 a, v ds = 10 v note5 input capacitance ciss 500 pf v ds = 10 v output capacitance coss 260 pf v gs = 0 reverse transfer capacitance crss 110 pf f = 1 mhz turn-on delay time t d(on) 10 ns v gs =10 v, i d = 5 a rise time t r 50 ns r l = 6 w turn-off delay time t d(off) ?0ns fall time t f 100 ns body?rain diode forward voltage v df 0.9 v i f =10 a, v gs = 0 body?rain diode reverse recovery time t rr 52 ns i f =10 a, v gs = 0 dif/ dt = 50a/ ? note: 5. pulse test
6am15 4 electrical characteristics (p channel) (ta = 25?) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss ?0 v i d = ?0 ma, v gs = 0 gate to source breakdown voltage v (br)gss ?0 v i g = ?00 m a, v ds = 0 gate to source leak current i gss ?0 m av gs = ?6 v, v ds = 0 zero gate voltage drain current i dss ?0 m av ds = ?0 v, v gs = 0 gate to source cutoff voltage v gs(off) ?.0 ?.0 v v ds = ?0 v, i d = ? ma static drain to source on state r ds(on) 0.085 0.105 w i d = ? a, v gs = ?0 v note5 resistance r ds(on) 0.115 0.165 w i d = ? a, v gs = ? v note5 forward transfer admittance |y fs | 5.5 9 s i d = ? a, v ds = ?0 v note5 input capacitance ciss 850 pf v ds = ?0 v output capacitance coss 420 pf v gs = 0 reverse transfer capacitance crss 110 pf f = 1 mhz turn-on delay time t d(on) 12 ns v gs = ?0 v, i d = ? a rise time t r 55 ns r l = 6 w turn-off delay time t d(off) 130 ns fall time t f ?0ns body?rain diode forward voltage v df ?.95 v i f = ?0 a, v gs = 0 body?rain diode reverse recovery time t rr 65 ns i f = ?0 a, v gs = 0 dif/ dt = 50 a/ ? note: 5. pulse test
6am15 5 main characteristics 6 5 4 3 2 1 0 25 50 75 100 125 150 ambient temperature ta (?) channel dissipation pch (w) 6 device operation condition : channel dissipation of each die is identical 4 device operation 2 device operation 1 device operation 60 40 20 0 25 50 75 100 125 150 case temperature tc (?) channel dissipation pch (w) condition : channel dissipation of each die is identical 6 device operation 4 device operation 2 device operation 1 device operation maximum channel dissipation curve 50 30 10 3 1 0.3 0.1 0.05 0.1 0.3 1 3 10 30 100 drain to source voltage v (v) ds drain current i (a) d 1 ms pw = 10 ms (1 shot) dc operation (tc = 25?) ta = 25? operation in this area is limited by r (on) ds 10 s m 100 s m maximum safe operation area (n-channel) ?50 ?30 ?10 ?3 ?1 ?0.3 ?0.1 ?0.05 ?0.1 ?0.3 ?1 3 10 ?30 ?100 drain to source voltage v (v) ds drain current i (a) d 1 ms pw = 10 ms (1 shot) dc operation (tc = 25?) ta = 25? operation in this area is limited by r (on) ds 10 s m 100 s m maximum safe operation area (p-channel) maximum channel dissipation curve
6am15 6 main characteristics ( n channel ) 20 16 12 8 4 0 2 46810 20 16 12 8 4 0 12345 10 v 6 v 5 v 3.5 v 4 v 3 v v = 2.5 v gs 4 .5 v tc = 75? 25? ?5? v = 10 v ds pulse test pulse test 2.0 1.6 1.2 0.8 0.4 0 48 12 16 20 5 20 100 11050 2 1.0 0.2 0.5 0.1 0.02 0.01 0.05 10 a 5 a i = 20 a d v = 4 v gs 10 v pulse test pulse test drain to source voltage v (v) ds drain current i (a) d typical output characteristics gate to source voltage v (v) gs drain current i (a) d typical transfer characteristics gate to source voltage v (v) gs drain to source saturation voltage vs. gate to source voltage v (v) ds(on) drain to source saturation voltage drain current i (a) d drain to source on state resistance r (m ) w ds(on) static drain to source on state resistance vs. drain current
6am15 7 main characteristics ( n channel ) 0.20 0.16 0.12 0.08 0.04 ?0 0 40 80 120 160 0 0.1 0.2 1 5 20 20 2 5 1 0.5 0.5 2 i = 10 a d v = 4 v gs 10 v 5 a 5 a 20 a 10 a 10 10 25 ? tc = ?5 ? 75 ? pulse test ds v = 10 v pulse test 0.1 0.5 1 2 10 0.2 5 01020304050 1000 200 500 100 10 20 50 500 200 100 20 50 10 5 2000 v = 0 f = 1 mhz gs ciss coss crss 20 di / dt = 50 a / ? v = 0, ta = 25 ? gs case temperature tc (?) r (m ) ds(on) static drain to source on state resistance w static drain to source on state resistance vs. temperature drain current i (a) d forward transfer admittance |y | (s) fs forward transfer admittance vs. drain current reverse drain current i (a) dr reverse recovery time trr (ns) body?rain diode reverse recovery time capacitance c (pf) drain to source voltage v (v) ds typical capacitance vs. drain to source voltage
6am15 8 main characteristics ( n channel ) 100 80 60 40 20 0 20 16 12 8 4 8 16 24 32 400 0 1000 300 100 30 10 0.1 0.2 1 5 10 v = 10 v 25 v 50 v dd v = 50 v 25 v 10 v dd i = 10a d v gs v ds 3 1 0.5 2 20 r t v = 10 v, v = 30 v pw = 5 ?, duty < 1 % gs dd t f d(on) t d(off) t 0 0.4 0.8 1.2 1.6 2.0 10 8 6 4 2 25 50 75 100 125 150 0 v = 0, ? v gs 10 v 5 v 20 16 12 8 4 pulse test gate charge qg (nc) drain to source voltage v (v) ds gate to source voltage v (v) gs dynamic input characteristics drain current i (a) d switching time t (ns) switching characteristics channel temperature tch (?) repetitive avalanche energy e (mj) ar maximun avalanche energy vs. channel temperature derating source to drain voltage v (v) sd reverse drain current i (a) dr reverse drain current vs. source to drain voltage i = 10 a v = 25 v duty < 0.1% rg > 50 ap dd w
6am15 9 main characteristics ( n channel ) d. u. t rg i monitor ap v monitor ds v dd 50 w vin 15 v 0 i d v ds i ap v (br)dss l v dd e = ?l ?i 2 1 v v ?v ar ap dss dss dd 2 vin monitor d.u.t. vin 10 v r l v = 30 v dd tr td(on) vin 90% 90% 10% 10% vout td(off) vout monitor 50 w 90% 10% t f avalanche test circuit avalanche waveform switching time test circuit waveform
6am15 10 main characteristics ( p channel ) ?0 ?6 ?2 ? ? 0 ? ? ? ? ?0 0 12345 ?.5 v ? v ?0 ?6 ?2 ? ? ?5 ? 25 ? tc = 75 ? ?0 v ? v ? v pulse test ds pulse test v = ?0 v ? v v = ?.5 v gs ?.0 ?.2 ?.4 ?.6 ?.8 0 ? ? ?2 ?6 ?0 1 0.5 0.05 0.02 0.01 ?.1 ?.3 ? ? ?0 ?0 ?00 ?0 a ? a 0.2 0.1 ?0 v v = ? v gs pulse test pulse test ?5 a drain to source voltage v (v) ds drain current i (a) d typical output characteristics gate to source voltage v (v) gs drain current i (a) d typical transfer characteristics gate to source voltage v (v) gs drain to source saturation voltage vs. gate to source voltage v (v) ds(on) drain to source saturation voltage drain current i (a) d drain to source on state resistance r (m ) w ds(on) static drain to source on state resistance vs. drain current
6am15 11 main characteristics ( p channel ) 0.5 0.4 0.3 0.2 0.1 ?0 0 40 80 120 160 0 ?0 v gs v = ? v ?5 a -5,?0a pulse test ?.1 ? ?00 0.1 30 100 10 1 0.3 ?.3 ? ?0 ?0 3 ?0 a ? a i = ?5 a d 75 ? 25 ? ta = ?5 ? v = ?0 v ds pulse test 500 200 100 20 50 10 5 ?.1 ?.3 ? 0 ?0 ?0 ?0 ?0 ?0 5000 1000 300 100 ? ?0 30 10 v = 0 f = 1 mhz gs ciss coss crss di / dt = 50 a / ? v = 0, ta = 25 ? gs ?0 case temperature tc (?) r (m ) ds(on) static drain to source on state resistance w static drain to source on state resistance vs. temperature drain current i (a) d forward transfer admittance |y | (s) fs forward transfer admittance vs. drain current reverse drain current i (a) dr reverse recovery time trr (ns) body?rain diode reverse recovery time capacitance c (pf) drain to source voltage v (v) ds typical capacitance vs. drain to source voltage
6am15 12 main characteristics ( p channel ) 0 ?0 ?0 ?0 ?0 0 0 ? ? ?2 ?6 ?0 ?00 81624 32 40 1000 100 300 30 3 10 1 ?.1 ?.3 ? ? ?0 ?0 ds v gs v d i = ?0 a v = ?0 v ?5 v ?0 v dd v = ?0 v ?5 v ?0 v dd t f r t d(off) t d(on) t dd v = ?0 v, v = ?0 v pw = 5 ?, duty < 1 % gs ?0 ?6 ?2 ? ? 0 ?.4 ?.8 ?.2 ?.6 ?.0 v = 0, 5 v gs ?0 v ? v pulse test 10 8 6 4 2 25 50 75 100 125 150 0 gate charge qg (nc) drain to source voltage v (v) ds gate to source voltage v (v) gs dynamic input characteristics drain current i (a) d switching time t (ns) switching characteristics channel temperature tch (?) repetitive avalanche energy e (mj) ar maximun avalanche energy vs. channel temperature derating source to drain voltage v (v) sd reverse drain current i (a) dr reverse drain current vs. source to drain voltage i = ?0 a v = ?5 v duty < 0.1% rg > 50 ap dd w
6am15 13 main characteristics ( p channel ) d. u. t rg i monitor ap v monitor ds v dd 50 w vin ?5 v 0 i d v ds i ap v (br)dss l v dd e = ?l ?i 2 1 v v ?v ar ap dss dss dd 2 vin monitor d.u.t. vin ?0 v r l v = ?0 v dd tr td(on) vin 90% 90% 10% 10% vout td(off) vout monitor 50 w 90% 10% t f avalanche test circuit avalanche waveform switching time test circuit waveform
6am15 14 package dimensions hitachi code jedec eiaj mass (reference value) sp-12ta 6.1 g 31.3 24.4 0.1 16.4 0.3 +0.2 ?.3 3.8 3.2 f 2.54 1.4 0.85 0.1 2.2 0.2 0.55 +0.1 ?.06 5.0 0.2 2.0 0.1 10.0 0.3 2.7 3.2 3.0 16.0 0.3 10.5 0.5 123456789101112 as of january, 2001 unit: mm
6am15 15 cautions 1. hitachi neither warrants nor grants licenses of any rights of hitachi? or any third party? patent, copyright, trademark, or other intellectual property rights for information contained in this document. hitachi bears no responsibility for problems that may arise with third party? rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. hitachi makes every attempt to ensure that its products are of high quality and reliability. however, contact hitachi? sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the hitachi product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from hitachi. 7. contact hitachi? sales office for any questions regarding this document or hitachi semiconductor products. hitachi, ltd. semiconductor & integrated circuits. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan tel: tokyo (03) 3270-2111 fax: (03) 3270-5109 copyright ? hitachi, ltd., 2000. all rights reserved. printed in japan. hitachi asia ltd. hitachi tower 16 collyer quay #20-00, singapore 049318 tel : <65>-538-6533/538-8577 fax : <65>-538-6933/538-3877 url : http://www.hitachi.com.sg url northamerica : http://semiconductor.hitachi.com/ europe : http://www.hitachi-eu.com/hel/ecg asia : http://sicapac.hitachi-asia.com japan : http://www.hitachi.co.jp/sicd/indx.htm hitachi asia ltd. (taipei branch office) 4/f, no. 167, tun hwa north road, hung-kuo building, taipei (105), taiwan tel : <886>-(2)-2718-3666 fax : <886>-(2)-2718-8180 telex : 23222 has-tp url : http://www.hitachi.com.tw hitachi asia (hong kong) ltd. group iii (electronic components) 7/f., north tower, world finance centre, harbour city, canton road tsim sha tsui, kowloon, hong kong tel : <852>-(2)-735-9218 fax : <852>-(2)-730-0281 url : http://www.hitachi.com.hk hitachi europe ltd. electronic components group. whitebrook park lower cookham road maidenhead berkshire sl6 8ya, united kingdom tel: <44> (1628) 585000 fax: <44> (1628) 585160 hitachi europe gmbh electronic components group dornacher stra b e 3 d-85622 feldkirchen, munich germany tel: <49> (89) 9 9180-0 fax: <49> (89) 9 29 30 00 hitachi semiconductor (america) inc. 179 east tasman drive, san jose,ca 95134 tel: <1> (408) 433-1990 fax: <1>(408) 433-0223 for further information write to: colophon 2.0

▲Up To Search▲

Price & Availability of 6AM15NCHPCH

	To Download 6AM15NCHPCH Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .